A 0.297-pJ/bit 50.4-Gb/s/wire Inverter-Based Short-Reach Simultaneous Bidirectional Transceiver for Die-to-Die Interface in 5nm CMOS

This paper presents a clock-forwarded, Inverter-based Short-Reach Simultaneous Bi-Directional (ISR-SBD) PHY targeted for die-to-die communication over silicon interposer or similar high-density interconnect. Fabricated in a 5nm standard CMOS process, ISR-SBD PHY demonstrates 50.4Gb/s/wire (25.2Gb/s each direction) and 0.297pJ/bit on a 0.75V supply over a 1.2mm on-chip channel.