Yoshinori Nishi received the B.S. and M.S. degrees in low-temperature physics from Waseda University, Tokyo, Japan, in 1997 and 1999, respectively. From 1999 to 2003, he was with NTT Electronics, Inc., Atsugi, Japan, as a member of the High-Speed Device Development Group, where he was a Chief Designer for the 50-Gb/s InP HEMT logic family, first 50-Gb/s product in the market in 2001. In 2003, he joined the Research and Development Division, Kawasaki Microelectronics Inc., Chiba, Japan, where he led the development of 10-Gb/s burst-mode CDR for 10G-EPON application as a Chief Architect, also first in the market in 2009. He joined NVIDIA Corporation, Santa Clara, CA, USA, in 2011 and led one of NVLINK PHY design teams for eight years before he joined NVIDIA Research in 2020. His current research focuses on low-power, high-density interconnect for short-reach applications.
